部品番号
3N80K5
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page
23 Pages
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1.5 MB
メーカー
STMicroelectronics
3N80K5(2014) データシート - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using SuperMESH™ 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency.
FEATUREs
• TO-220 worldwide best RDS(on)
• Worldwide best FOM (figure of merit)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
部品番号
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N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2014 )
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N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2013 )
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N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET
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N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220 and IPAK packages
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