HOME >>> Unisonic Technologies >>>
3N80 PDF
3N80 データシート - Unisonic Technologies
メーカー

Unisonic Technologies
DESCRIPTION
The UTC 3N80provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)=3.8Ω@VGS=10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( CRSS= Typical 11 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
6.0 Amps, 800 Volts N-CHANNEL POWER MOSFET ( Rev : 2010 )
Unisonic Technologies
5 Amps, 800 Volts N-CHANNEL POWER MOSFET ( Rev : 2011_B )
Unisonic Technologies
7.0 Amps, 800 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies
4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET ( Rev : 2010 )
Unisonic Technologies
Power MOSFET 7 Amps, 800 Volts
ON Semiconductor
3 Amps, 500 Volts N-CHANNEL POWER MOSFET ( Rev : 2011 )
Unisonic Technologies
Power MOSFET 3 Amps, 20 Volts N–Channel Micro8
ON Semiconductor
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Zibo Seno Electronic Engineering Co.,Ltd
3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET
Unisonic Technologies
Power MOSFET 3 Amps, 30 Volts
ON Semiconductor