Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage.

FEATUREs
■ High breakdown voltage VCEO = 140 V
■ Complementary to 2STW1695
■ Fast-switching speed
■ Typical ft = 20 MHz
■ Fully characterized at 125 ^oC

Applications
■ Audio power amplifier