2STA1695 データシート - STMicroelectronics
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STMicroelectronics
Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
General features
■ High breakdown voltage VCEO = -140V
■ Complementary to 2STC4468
■ Typical ft =20MHz
■ Fully characterized at 125 °C
APPLICATIONs
■ Audio power amplifier
High power PNP epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics
High power PNP epitaxial planar bipolar transistor ( Rev : 2007 )
STMicroelectronics
High power PNP epitaxial planar bipolar transistor ( Rev : 2008_11 )
STMicroelectronics
High power PNP epitaxial planar bipolar transistor
STMicroelectronics