2SK879-R(2014) データシート - Toshiba
メーカー
Toshiba
General Purpose and Impedance Converter and Condenser Microphone Applications
• High breakdown voltage: VGDS = −50 V
• High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
• Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
• Small package
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type ( Rev : 2007 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
