2SK4014(2006) データシート - Toshiba
メーカー

Toshiba
DC/DC Converter, Relay Drive and Motor Drive Applications
● Low drain−source ON-resistance : RDS (ON) = 1.6 Ω (typ.)
● High forward transfer admittance : |Yfs| = 5.0 S (typ.)
● Low leakage current : IDSS = 100 µA (max) (VDS = 720 V)
● Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba