2SK3880(2013) データシート - Toshiba
メーカー

Toshiba
Switching Regulator Applications
• Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.)
• High forward transfer admittance: |Yfs| = 5.2 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
• Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) ( Rev : 2013 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSIV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) ( Rev : 2006 )
Toshiba