2SK3441(2006) データシート - Toshiba
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Toshiba
DC-DC Converter Applications
Relay Drive and Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 80 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 60 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba