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2SK3397
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2SK3397(2009) データシート - Toshiba
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Relay Drive and DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 110 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
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