2SK3389 データシート - Toshiba
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Toshiba
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
• Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 70 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 30 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
Toshiba