2SK3378ENTR-E データシート - Renesas Electronics
メーカー
Renesas Electronics
Features
• Low on-resistance
RDS= 2.7Ω typ. (VGS= 10 V, ID= 50 mA)
RDS= 4.7Ω typ. (VGS= 4 V, ID= 20 mA)
• 4 V gate drive device.
• Small package (CMPAK)
Page Link's:
1
2
3
4
5
6
7
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics
