HOME >>> Hitachi -> Renesas Electronics >>>
2SK3233 PDF
2SK3233 データシート - Hitachi -> Renesas Electronics
メーカー
Hitachi -> Renesas Electronics
Features
• Low on-resistance: RDS(on)= 1.1 Ωtyp.
• Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
• High speed switching: tf = 15 ns typ (at VGS = 10 V, VDD = 250 V, ID = 2.5 A)
• Low gate charge: Qg = 15 nC typ (at VDD = 400 V, VGS = 10 V, ID = 5 A)
• Avalanche ratings
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
5A, 500V N-CHANNEL POWER MOSFET
Unisonic Technologies
5A, 500V N-CHANNEL POWER MOSFET ( Rev : 2015 )
Unisonic Technologies
5A, 500V N-CHANNEL POWER MOSFET
Unisonic Technologies
5A, 500V N-CHANNEL POWER MOSFET ( Rev : 2014 )
Unisonic Technologies
5A, 500V N-CHANNEL POWER MOSFET
Unisonic Technologies
5A, 500V N-CHANNEL POWER MOSFET
Unisonic Technologies
500V,5A N-Channel MOSFET
Alpha and Omega Semiconductor
500V, 5A N-Channel MOSFET ( Rev : 2021 )
Alpha and Omega Semiconductor
5A，500V N-CHANNEL MOSFET
KIA Semiconductor Technology
500V, 5A N-Channel MOSFET
Alpha and Omega Semiconductor
