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2SK2734 PDF
2SK2734 データシート - Hitachi -> Renesas Electronics
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Hitachi -> Renesas Electronics
Features
• Low on-resistance
RDS(on) = 0.04Ω typ (at VGS = 10 V, ID = 2.5 A)
• 4V gate drive devices.
• Large current capacitance
ID = 5 A
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Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics