2SK2718 データシート - Toshiba
メーカー

Toshiba
DC−DC Converter and Motor Drive Applications
• Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.)
• High forward transfer admittance : |Yfs| = 2.0 S (typ.)
• Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
• Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Toshiba