2SK2549(1998) データシート - Toshiba
メーカー

Toshiba
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS
DC−DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS
● 2.5V Gate Drive
● Low Drain−Source ON Resistance : RDS (ON) = 0.29 Ω (Typ.)
● High Forward Transfer Admittance : |Yfs| = 3.0 S (Typ.)
● Low Leakage Current : IDSS = 100 μA (Max.) (VDS = 16 V)
● Enhancement-Mode : Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 μA)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV)
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Toshiba