2SK1544(V2) データシート - Toshiba
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Toshiba
Field Effect Transistor
Silicon N Channel MOS Type (π-MOS III.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
FEATUREs
• Low Drain-Source ON Resistance
- RDS(ON) = 0.15Ω (Typ.)
• High Forward Transfer Admittance
- |Yfs| = 21S (Typ.)
• Low Leakage Current
- IDSS = 300µA (Max.) @ VDS = 500V
• Enhancement-Mode
- Vth = 1.5 ~ 3.5V @ VDS = 10V, ID = 1mA
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) ( Rev : 2010 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS III) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOS III)
Toshiba