2SK1109 データシート - KEXIN Industrial
メーカー
KEXIN Industrial
■ Features
● VDS (V) = 20V
● ID = 10m A
● High forward transfer admittance
1000 μs TYP. (IDSS = 100 μA)
1600 μs TYP. (IDSS = 200 μA)
● Includes diode and high resistance at G - S
N-Channel Junction Field Effect Transistors
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N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
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N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
New Jersey Semiconductor
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS
New Jersey Semiconductor
N-channel silicon junction field-effect transistors
Philips Electronics
N-channel silicon junction field-effect transistors
Philips Electronics
N-Channel Silicon Junction Field-Effect Transistors
New Jersey Semiconductor
