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2SJ601 データシート - NEC => Renesas Technology

2SJ601 image

部品番号
2SJ601

コンポーネント説明

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8 Pages

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157.4 kB

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NEC
NEC => Renesas Technology 

DESCRIPTION
The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

FEATURES
Low on-state resistance:
   RDS(on)1 = 31 mMAX. (VGS = –10 V, ID = –18 A)
   RDS(on)2 = 46 mMAX. (VGS = –4.0 V, ID = –18 A)
Low input capacitance:
   Ciss = 3300 pF TYP. (VDS = –10 V, VGS = 0 V)
Built-in gate protection diode
TO-251/TO-252 package

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部品番号
コンポーネント説明
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メーカー
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
PDF
NEC => Renesas Technology

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