2SJ601 データシート - KEXIN Industrial
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KEXIN Industrial
MOS Field Effect Transistor
FEATUREs
Low on-resistance
RDS(on)1 = 31 m MAX. (VGS =-10 V, ID = -18 A)
RDS(on)2 = 46m MAX. (VGS = -4.0 V, ID =-18 A)
Low Ciss: Ciss = 3300 pF TYP.
Built-in gate protection diode
MOS Field Effect Transistor
TY Semiconductor
MOS Field Effect Transistor ( Rev : V2 )
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
TY Semiconductor
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
TY Semiconductor
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial
MOS Field Effect Transistor
KEXIN Industrial