2SJ493 データシート - NEC => Renesas Technology
メーカー
NEC => Renesas Technology
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Super low on-state resistance
RDS(on)1 = 100 mΩ (MAX.) (VGS = –10 V, ID = –8 A)
RDS(on)2 = 185 mΩ (MAX.) (VGS = –4 V, ID = –8 A)
• Low Ciss: Ciss = 1210 pF (TYP.)
• Built-in gate protection diode
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SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
