2SJ179 データシート - Renesas Electronics
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Renesas Electronics
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
The 2SJ179, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source.
As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators as motors, relays and solenoids.
P-Channel MOS FET For High-Speed Switching
KEXIN Industrial
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
P-Channel MOS FET / High-Speed Switching
NEC => Renesas Technology
P-Channel MOS FET / HIGH-SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FET FOR HIGH SWITCHING
NEC => Renesas Technology
Silicon P Channel MOS FET High Speed Switching ( Rev : 2014 )
Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon P Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics