2SJ103 データシート - Toshiba
メーカー
Toshiba
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
• High breakdown voltage: VGDS= 50 V
• High input impedance: IGSS= 1.0 nA (max) (VGS= 30 V)
• Low RDS (ON): RDS (ON)= 270 Ω(typ.) (IDSS= −5 mA)
• Complimentary to 2SK246
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL JUNCTION TYPE ( Rev : 1997 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
Toshiba
