2SD993 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• High Breakdown Voltage- : VCBO= 1500V (Min)
• Collector-Emitter Saturation Voltage- : VCE(sat)= 10V(Max.)@ IC= 2.5A
• Built-in Damper Diode
APPLICATIONS
• Designed for horizontal deflection output applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor