2SD878 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V (Min)
• High Power Dissipation
• High Current Capability
APPLICATIONS
• High power amplifier applications.
• High power switching applications.
• DC-DC converter applications.
• Regulator applications.
NPN EPITAXIAL TRANSISTOR
Unisonic Technologies
NPN EPITAXIAL TRANSISTOR
Inchange Semiconductor
NPN EPITAXIAL TRANSISTOR ( Rev : V2 )
Unisonic Technologies
NPN EPITAXIAL TRANSISTOR
GTM CORPORATION
NPN EPITAXIAL TRANSISTOR
GTM CORPORATION
NPN EPITAXIAL TRANSISTOR
Unisonic Technologies
NPN EPITAXIAL TRANSISTOR
First Components International
NPN EPITAXIAL TRANSISTOR
Inchange Semiconductor
NPN EPITAXIAL TRANSISTOR
SavantIC Semiconductor
NPN EPITAXIAL TRANSISTOR
Micro Commercial Components