2SD2707(2013) データシート - ROHM Semiconductor
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ROHM Semiconductor
NPN 150mA 50V Muting Transistors
FEATUREs
1) High DC current gain. hFE =2700 (Max.)
2) High emitter-base voltage. VEBO is Min. 12V
3) Low VCE(sat) VCE(sat)=0.3V(Max.) (IC/IB=50mA/5mA)
4) Lead Free/RoHS Compliant.
APPLICATIONs
Muting circuit
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