2SD2696 データシート - ROHM Semiconductor
メーカー

ROHM Semiconductor
Features
1) The transistor of 400mA class which went only with 2012
size conventionally is attained in 1208 size.
2) Collector saturation voltage is low.
VCE (sat) : max. 300mA at IC = 100mA / IB = 2mA
APPLICATIONs
Switching
For low frequency general amplification
SANYO -> Panasonic
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JILIN SINO-MICROELECTRONICS CO., LTD.
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3DD1557 / D1557 / Low frequency amplification bipolar transistor
Jilin Sino-Microelectronics
Low frequency amplification case rated bipolar transistor
Unspecified
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC => Renesas Technology