2SD2611 データシート - ROHM Semiconductor
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ROHM Semiconductor
Features
1) Low saturation voltage, typically VCE(sat) = 0.3V at IC/IB=4/0.4A.
2) Excellent DC current gain characteristics.
3) PC = 300W (TC=25°C)
4) Wide SOA (safe operating area).
5) Complements the 2SB1672.
Power Transistor (−80V, −7A)
ROHM Semiconductor
80V/7A High-Current Switching Applications
SANYO -> Panasonic
Power Transistor(80V,1A)
Galaxy Semi-Conductor
Power Transistor (80V, 4A)
ROHM Semiconductor
2SB1644Power Transistor ( -80V, -4A), 2SB1551 Power Transistor ( -80V, -10A)
ROHM Semiconductor
Power Transistor (−80V, −1A)
ROHM Semiconductor
Power Transistor (−80V, −1A)
ROHM Semiconductor
Power Transistor (-80V, -1A) ( Rev : 2009 )
ROHM Semiconductor
Power Transistor(-80V,-1A)
Galaxy Semi-Conductor
Power Transistor (−80V, −1A) ( Rev : 2012 )
ROHM Semiconductor