2SD2537(2017) データシート - ROHM Semiconductor
メーカー
ROHM Semiconductor
Features
1) Low saturation voltage, Max.
VCE(sat)=300mV at IC/IB=500mA/10mA.
2) High emitter-base voltage.
(VEBO=12V)
3) PD=2W (Mounted on a ceramic board
(40×40×0.7mm) ).
APPLICATION
LOW FREQUENCY AMPLIFIER
1.2A Power Rectifier
SANYO -> Panasonic
Middle Power Transistor(-50V / -1A)
ROHM Semiconductor
Middle Power Transistor (50V, 500mA) ( Rev : 2016 )
ROHM Semiconductor
Middle Power Transistor (12V / 2A)
ROHM Semiconductor
Middle Power Transistor (30V / 1A)
ROHM Semiconductor
Middle Power Transistor(120V/1.5A) ( Rev : 2016 )
ROHM Semiconductor
Middle Power Transistor(120V/1.5A)
ROHM Semiconductor
Middle Power Transistor(-50V / -3A)
ROHM Semiconductor
Middle Power Transistor(-30V/-2A)
ROHM Semiconductor
Middle Power Transistor (80V / 1.5A)
ROHM Semiconductor
