2SD2256 データシート - Inchange Semiconductor
メーカー
Inchange Semiconductor
DESCRIPTION
• High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V
• High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 120V(Min)
APPLICATIONS
• Designed for low frequency power amplifier applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
