2SD2204 データシート - Toshiba
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Toshiba
High-Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
• High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A)
• Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type
Toshiba