2SD2140 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min)
• Wide Area of Safe Operation
• Complement to Type 2SB1421
APPLICATIONS
• Designed for high power amplifications.
• Optimum for the output stage of a HiFi audio amplifier
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor