2SD2021 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V (Min)
• Wide Area of Safe Operation
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for low frequency power amplifier TV vertical
deflection output applications
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor