2SD1761 データシート - ROHM Semiconductor
メーカー
ROHM Semiconductor
Low Feq. Power Amp.
Triple Diffused Planar NPN Silicon Transistor
FEATUREs
1) Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
2) Excellent current characteristics of DC current gain.
3) Large collector power dissipation: PC=30W(TC=25℃)
4) Complementary pair with 2SB1187
Low Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor
ROHM Semiconductor
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor ( Rev : V2 )
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
Silicon NPN Triple Diffused Planar Transistor
Sanken Electric co.,ltd.
