TRANSISTOR (NPN)
FEATURES
• Low Collector Saturation Voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A
• Excellent Current Characteristics of DC Current Gain.
• Large Collector Power Dissipation: PC=30W(TC=25℃)
• Complementary Pair with 2SB1187
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd
TO-220F Plastic-Encapsulate Transistors
Jiangsu Changjiang Electronics Technology Co., Ltd