2SD1758_10 データシート - ROHM Semiconductor
メーカー

ROHM Semiconductor
Features
1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.)
(IC/IB = 2A / 0.2A)
2) Complements the 2SB1182 / 2SB1240
Structure
Epitaxial planar type NPN silicon transistor
Medium power transistor(-32V,-2A)
Galaxy Semi-Conductor
Medium Power Transistor (32V, 2A) ( Rev : RevA )
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (-32V, -2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (−32V, −2A)
ROHM Semiconductor
Medium power transistor (32V, 2A) ( Rev : 2009 )
ROHM Semiconductor
Medium power Transistor(32V, 2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (32V, 2A)
ROHM Semiconductor