2SD1460 データシート - Toshiba
メーカー
Toshiba
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES:
• High Collector Current : IC=30A
• High DC Current Gain : hFE=1000(Min.)(VCE=5V, IC=20A)
• Monolithic Construction with Built-In Base-Emitter
Shunt Resistor.
SILICON NPN TRIPLE DIFFUSED TYPE(DARLINGTON POWER)
Toshiba
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
Toshiba
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER)
Toshiba
SILICON NPN TRIPLE DIFFUSED MESA TYPE (DARLINGTON POWER)
Toshiba
SILICON NPN TRIPLE DIFFUSED MEGA TYPE (DARLINGTON POWER)
Toshiba
Transistor Silicon NPN Triple Diffused Type (Darlington)
Toshiba
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON) ( Rev : 1997 )
Toshiba
Silicon NPN Triple Diffused Type (Darlington) Transistor
Toshiba
Silicon NPN Triple-Diffused Planar Darlington Type
Panasonic Corporation
Silicon NPN Triple Diffused Type (Darlington power transistor)Transistor
Toshiba
