2SD1115 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= 300V(Min)
·High DC Current Gain: hFE= 500(Min)@IC= 2A
APPLICATIONS
·Designed for high voltage switching, igniter applications.
Silicon NPN Darlington Power Transistor ( Rev : V2 )
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Inchange Semiconductor
Silicon NPN Darlington Power Transistor
Unspecified
Silicon NPN Darlington Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.