2SC5713 データシート - Toshiba
メーカー
Toshiba
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE= 400 to 1000 (IC= 0.5 A)
• Low collector-emitter saturation voltage: VCE (sat)= 0.15 V (max)
• High-speed switching: tf= 50 ns (typ.)
Silicon NPN Epitaxial Type Transistor
Toshiba
Silicon NPN Epitaxial Type Transistor
Toshiba
Silicon NPN Epitaxial Type Transistor
TY Semiconductor
TRANSISTOR SILICON NPN EPITAXIAL TYPE
New Jersey Semiconductor
TRANSISTOR SILICON NPN EPITAXIAL TYPE ( Rev : 1997 )
Toshiba
Silicon NPN Epitaxial Type Transistor
Toshiba
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Hi-Sincerity Microelectronics
Silicon NPN transistor epitaxial type
Unspecified
Silicon NPN Epitaxial Type Transistor
Toshiba
Silicon NPN Epitaxial Type Transistor
Toshiba
