2SC5593 データシート - Renesas Electronics
メーカー
Renesas Electronics
Features
• High gain bandwidth product
fT = 23 GHz typ.
• High power gain and low noise figure ;
PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz
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Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi -> Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Renesas Electronics
Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator
Renesas Electronics
Silicon NPN Epitaxial
High Frequency Low Noise Amplifier / Oscillator
Hitachi -> Renesas Electronics
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
Inchange Semiconductor
