2SC5356 データシート - Toshiba
メーカー

Toshiba
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
• Excellent switching times: tf = 0.5 µs (max) (IC = 1.2 A)
• High collectors breakdown voltage: VCEO = 800 V
• High DC current gain: hFE = 15 (min) (IC = 0.15 A)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba