2SC4684(2002) データシート - Toshiba
メーカー

Toshiba
Strobe Flash Applications
Medium Power Amplifier Applications
• High DC current gain
: hFE (1) = 800 to 3200 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 250 (VCE = 2 V, IC = 4 A)
• Low collector saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 40 mA)
• High power dissipation
: PC = 10 W (Tc = 25°C), PC = 1.0 W (Ta = 25°C)
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2002 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba