2SC4681 データシート - Toshiba
メーカー
Toshiba
Strobe Flash Applications
Medium Power Amplifier Applications
• Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 0.5 A)
: hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
• Low collector saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 3 A, IB = 60 mA)
• Complementary to 2SA1802
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2009 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2010 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Type ( Rev : 2013 )
Toshiba
