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2SC4213 データシート - Toshiba

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2SC4213

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  1998   2014  

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For Muting and Switching Applications

•  High emitter-base voltage: VEBO= 25 V (min)
•  High reverse hFE: Reverse hFE= 150 (typ.) (VCE= −2 V, IC= −4 mA)
•  Low on resistance: RON= 1 Ω(typ.) (IB= 5 mA)
•  High DC current gain: hFE= 200~1200
•  Small package

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