2SC3663 データシート - NEC => Renesas Technology
メーカー

NEC => Renesas Technology
FEATURES
• Low-voltage, low-current, low-noise and high-gain
NF = 3.0 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
GA = 3.5 dB TYP. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
• Ideal for battery drive of pagers, compact radio equipment, cordless phones, etc.
• Gold electrode gives high reliability.
• Mini mold package, ideal for hybrid ICs.
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NEC => Renesas Technology
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NEC => Renesas Technology
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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC => Renesas Technology
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION
NEC => Renesas Technology