2SC3515(1997) データシート - Toshiba
メーカー

Toshiba
HIGH VOLTAGE CONTROL APPLICATIONS
PLASMA DISPLAY, NIXIE TUBE DRIVER APPLICATIONS
CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS
• High Voltage: VCBO = 300 V, VCEO = 300 V
• Low Saturation Voltage: VCE (sat) = 0.5 V (Max)
• Small Collector Output Capacitance: Cob = 3 pF (Typ.)
• Complementary to 2SA1384
• Small Flat Package
• PC = 1~2 W (Mounted Ceramic Substrate)
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) ( Rev : 2003 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
Toshiba