2SC2660 データシート - New Jersey Semiconductor
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- V(BR)CEO= 150V(Min)
• Large Collector Power Dissipation
• Complement to Type 2SA1133
APPLICATIONS
• Designed for power amplifier and TV vertical deflection output applications.
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
( Rev : V2 )
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor