2SB911MQ データシート - ROHM Semiconductor
メーカー

ROHM Semiconductor
● Features
1) Low VCE(sat).
VCE(sat) = -0.5V (Typ.)
(IC / IB = -2A / -0.2A)
2) Complements the 2SD1766 /
2SD1758 / 2SD1862 / 2SD1189F /
2SD1055 / 2SD1919 / SD1227M.
● Structure
Epitaxial planar type
PNP silicon transistor
Medium power transistor(-32V,-2A)
Galaxy Semi-Conductor
Medium power transistor (32V, 2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A) ( Rev : RevA )
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (-32V, -2A)
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (−32V, −2A)
ROHM Semiconductor
Medium power transistor (32V, 2A) ( Rev : 2009 )
ROHM Semiconductor
Medium Power Transistor (32V, 2A)
ROHM Semiconductor
Medium power transistor (32V, 2A)
ROHM Semiconductor