2SB901 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
◾ Collector-Emitter BreakdownVoltage-
: V(BR)CEO= -60V(Min.)
◾ Low Collector Saturation Voltage-
: VCE(sat)= -1.0(Max.) @IC= -2A
◾ Wide area of safe operation
◾ Good Linearity of hFE
◾ Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
◾ Designed for power amplifier and switching applications .
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