2SB880 データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• High DC Current Gain-
: hFE = 2000(Min)@ IC= -2A
• Wide Area of Safe Operation
• Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -2A
• Complement to Type 2SD1190
• Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulators applications.
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor