2SB817E データシート - Inchange Semiconductor
メーカー

Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min)
• Good Linearity of hFE
• High Current Capability
• Wide Area of Safe Operation
• Complement to Type 2SD1047E
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Designed for audio frequency amplifier output
stage applications
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
Shenzhen SPTECH Microelectronics Co., Ltd.
Silicon PNP Power Transistor
Inchange Semiconductor
Silicon PNP Power Transistor
New Jersey Semiconductor